Over the last few years, the realization of the quantum network has become a real possibility – with small networks already demonstrated using diamond NV centers1. Using entanglement distribution and bound by the laws of quantum physics, these networks offer unconditional security and the promise of scalable quantum computing. The key demonstration that has been accomplished used single qubits, but a scalable system will be needed to give a meaningful rate over such a network. This would comprise of 1000s or millions of qubits at each node in such a network – necessitating the development of a platform that could allow us to scale towards that goal. Rare-earth ions are a good candidate for solid-state qubit as their first excitation levels are 4f-4f transitions shielded from electrical fluctuations in the environment through the full 5s, 5p shell. A rare-earth ions-based platform that is silicon compatible would allow us to develop such scalable systems and a rare-earth-doped oxide offers an attractive option. In what follows, I have used my three papers along with intervening chapters to present key results, challenges, and outlook on this platform development effort. Chapter 2 discusses the Er:Y2O3 effort – one of the key findings here was the role of undoped buffer layers on the top and bottom in reducing the inhomogeneous linewidth. We also, somewhat surprisingly, discovered that the traditional measure of crystallinity in the inhomogeneity (XRD FWHM) didn’t have a correlation with the inhomogeneous linewidth - a more sensitive measure of the dopant’s local environment. Chapter 3 discusses the Er:TiO2 effort, where we have built upon the Y2O3 effort and have been able to demonstrate a higher degree of control over inhomogeneous and spectral diffusion. Chapter 4 dives into the nanofabrication techniques and challenges faced during development. Y2O3, being hard to etch material, showed serious issues that drastically limited the usefulness when considering device fabrication. TiO2, on the other hand, was relatively easy to etch film, and that has enabled us to demonstrate devices fabricated on this platform. As we continue the development and future optimization on this platform, it is important to probe the systems where technologies that we are developing will be used - chapter 5 does precisely that. By performing system-level analysis, we estimate that a system demonstrating a coherence time of >10 ms would enable us to distribute entanglement up to 1000 km. Providing an important benchmark that future iteration and development should aim for. To summarize, we have shown that REI doped oxide thin films on silicon are a viable platform for the development of quantum technologies. In the outlook, I have identified avenues where challenges remain and try to paint a picture of what an integrated platform might look like.