Published September 10, 2002
| Version v1
Patent
Open
Field emission from bias-grown diamond thin films in a microwave plasma
Creators
- 1. University of Chicago
- 2. Argonne National Laboratory
Description
A method of producing diamond or diamond like films in which a negative bias is established on a substrate with an electrically conductive surface in a microwave plasma chemical vapor deposition system. The atmosphere that is subjected to microwave energy includes a source of carbon, nitrogen and hydrogen. The negative bias is maintained on the substrate through both the nucleation and growth phase of the film until the film is continuous. Biases between -100V and -200 are preferred. Carbon sources may be one or more of CH4, C2H2 other hydrocarbons and fullerenes.
Files
US6447851.pdf
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Additional details
Identifiers
- Patent application number
- US 35206399 A
- Patent number
- US 6447851 B1
- Other
- oai:uchicago.tind.io:8764
Dates
- Patent filed
-
1999-07-14