Published September 10, 2002 | Version v1
Patent Open

Field emission from bias-grown diamond thin films in a microwave plasma

  • 1. University of Chicago
  • 2. Argonne National Laboratory

Contributors

Patent applicant:

Patent assignee:

Description

A method of producing diamond or diamond like films in which a negative bias is established on a substrate with an electrically conductive surface in a microwave plasma chemical vapor deposition system. The atmosphere that is subjected to microwave energy includes a source of carbon, nitrogen and hydrogen. The negative bias is maintained on the substrate through both the nucleation and growth phase of the film until the film is continuous. Biases between -100V and -200 are preferred. Carbon sources may be one or more of CH4, C2H2 other hydrocarbons and fullerenes.

Files

US6447851.pdf

Files (623.5 kB)

Name Size Download all
md5:2efdbc8bd7760b6e581e4f4437933eee
623.5 kB Preview Download

Additional details

Identifiers

Patent application number
US 35206399 A
Patent number
US 6447851 B1
Other
oai:uchicago.tind.io:8764

Dates

Patent filed
1999-07-14

UChicago Information

Division(s)
Physical Sciences Division
Department(s)
Physics