Published June 30, 1998 | Version v1
Patent Open

Method for the preparation of nanocrystalline diamond thin films

  • 1. University of Chicago
  • 2. Argonne National Laboratory

Contributors

Patent applicant:

Patent assignee:

Description

A method and system for manufacturing nanocrystalline diamond film on a substrate such as field emission tips. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrocarbon and possibly hydrogen, and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous vapor and deposition of a diamond film on the field emission tip.

Files

US5772760.pdf

Files (1.4 MB)

Name Size Download all
md5:c93f9fc10dfcb81510d6dbc2aa592bd3
1.4 MB Preview Download

Additional details

Identifiers

Patent application number
US 54091695 A
Patent number
US 5772760 A
Other
oai:uchicago.tind.io:8755

Dates

Patent filed
1995-10-11

UChicago Information

Division(s)
Physical Sciences Division
Department(s)
Physics