Published November 1, 2018
| Version v1
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HALOMETALLATE LIGAND-CAPPED SEMICONDUCTOR NANOCRYSTALS
Creators
- 1. University of Chicago
Contributors
Patent applicant:
Description
Halometallate-capped semiconductor nanocrystals and methods for making the halometallate-capped semiconductor nanocrystals are provided. Also provided are methods of using solutions of the halometallate-capped semiconductor nanocrystals as precursors for semiconductor film formation. When solutions of the halometallate ligand-capped semiconductor nanocrystals are annealed, the halometallate ligands can act as grain growth promoters during the sintering of the semiconductor nanocrystals.
Files
US20180315600.pdf
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Additional details
Identifiers
- Patent application number
- US 201615772258 A
- Patent number
- US 2018/0315600 A1
- Other
- oai:uchicago.tind.io:8132
Dates
- Patent filed
-
2016-11-02