Published June 16, 1998
| Version v1
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Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications
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Description
An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.
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Additional details
Identifiers
- Patent application number
- US 67150496 A
- Patent number
- US 5765680 A
- Other
- oai:uchicago.tind.io:9362
Dates
- Patent filed
-
1996-06-27