Published September 21, 2004
| Version v1
Patent
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N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom
Creators
- 1. University of Chicago
- 2. Argonne National Laboratory
Description
An electrically conducting n-type ultrananocrystalline diamond (UNCD) having no less than 10<19 >atoms/cm<3 >of nitrogen is disclosed. A method of making the n-doped UNCD. A method for predictably controlling the conductivity is also disclosed.
Files
US6793849.pdf
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Additional details
Identifiers
- Patent application number
- US 39842703 A
- Patent number
- US 6793849 B1
- Other
- oai:uchicago.tind.io:8776
Dates
- Patent filed
-
2003-12-12