Published April 15, 1997
| Version v1
Patent
Open
Diamond film growth from fullerene precursors
Creators
- 1. University of Chicago
Description
A method and system for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate.
Files
US5620512.pdf
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Additional details
Identifiers
- Patent number
- US 14386693 A
- Patent application number
- US 5620512 A
- Other
- oai:uchicago.tind.io:8752
Dates
- Patent filed
-
1993-10-27