Physical Sciences Division
Published November 8, 2007 | Version v1
Patent Open

Use of tungsten interlayer to enhance the initial nucleation and conformality of ultrananocrystalline diamond (UNCD) thin films

Creators

  • 1. Argonne National Laboratory

Contributors

Patent applicant:

Patent assignee:

Description

Extremely smooth (6 nm roughness) and continuous ultrananocrystalline diamond (UNCD) thin films were achieved by microwave plasma chemical vapor deposition using a thin 10 nm tungsten (W) interlayer between the silicon (Si) substrate and the diamond film. The W interlayer significantly increased the initial UNCD nucleation density to >1012 sites/cm2, thereby lowering the surface roughness and eliminating interfacial voids. A method is also disclosed to make various articles.

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Additional details

Identifiers

Patent application number
US 42901606 A
Patent number
US 2007/0257265 A1
Other
oai:uchicago.tind.io:9121

Dates

Patent filed
2006-05-03

UChicago Information

Division(s)
Physical Sciences Division
Department(s)
Physics