Published August 7, 2001
| Version v1
Patent
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Semiconductor assisted metal deposition for nanolithography applications
Creators
- 1. Argonne National Laboratory
Description
An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
Files
US6271130.pdf
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Additional details
Identifiers
- Patent number
- US 20015998 A
- Patent application number
- US 6271130 B1
- Other
- oai:uchicago.tind.io:9212
Dates
- Patent filed
-
1998-11-25