Published November 19, 2019
| Version v1
Patent
Open
Resistive switching memory device
Creators
- 1. University of Chicago
- 2. Argonne National Laboratory
Contributors
Patent applicants:
Description
Provided herein are resistive switching devices comprising a nanocomposite, an inert electrode and an active electrode. Also provided are methods for preparing and using the disclosed resistive switching devices.
Files
US10483464.pdf
Files
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Additional details
Identifiers
- Patent number
- US 10483464 B1
- Patent application number
- US 201815994589 A
- Other
- oai:uchicago.tind.io:6972
Dates
- Patent filed
-
2018-05-31