000009401 001__ 9401
000009401 005__ 20251007025542.0
000009401 024__ $$dUS 55083500 A
000009401 024__ $$aUS 6249453 B1
000009401 037__ $$aPATENT
000009401 041__ $$aEnglish
000009401 245__ $$aVoltage controlled spintronic devices for logic applications
000009401 260__ $$c2001-06-19
000009401 260__ $$g2000-04-18
000009401 336__ $$aPatent
000009401 520__ $$aA reprogrammable logic gate comprising first and second voltage-controlled rotation transistors. Each transistor comprises three ferromagnetic layers with a spacer and insulating layer between the first and second ferromagnetic layers and an additional insulating layer between the second and third ferromagnetic layers. The third ferromagnetic layer of each transistor is connected to each other, and a constant external voltage source is applied to the second ferromagnetic layer of the first transistor. As input voltages are applied to the first ferromagnetic layer of each transistor, the relative directions of magnetization of the ferromagnetic layers and the magnitude of the external voltage determines the output voltage of the gate. By altering these parameters, the logic gate is capable of behaving as AND, OR, NAND, or NOR gates.
000009401 690__ $$aPhysical Sciences Division
000009401 691__ $$aChemistry
000009401 7011_ $$aYou, Chun-Yeol$$uArgonne National Laboratory
000009401 7011_ $$aBader, Samuel D.$$uArgonne National Laboratory
000009401 7121_ $$aUniversity of Chicago
000009401 7131_ $$aUChicago Argonne LLC
000009401 7131_ $$aUniversity of Chicago
000009401 8564_ $$9608aedaa-3951-462f-be9a-1aafbaf876c6$$s359962$$uhttps://knowledge.uchicago.edu/record/9401/files/US6249453.pdf$$ePublic
000009401 909CO $$ooai:uchicago.tind.io:9401$$pGLOBAL_SET
000009401 983__ $$aPatent