@article{PATENT,
      recid = {9401},
      title = {Voltage controlled spintronic devices for logic  applications},
      number = {PATENT},
      month = {Jun},
      year = {2001},
      abstract = {A reprogrammable logic gate comprising first and second  voltage-controlled rotation transistors. Each transistor  comprises three ferromagnetic layers with a spacer and  insulating layer between the first and second ferromagnetic  layers and an additional insulating layer between the  second and third ferromagnetic layers. The third  ferromagnetic layer of each transistor is connected to each  other, and a constant external voltage source is applied to  the second ferromagnetic layer of the first transistor. As  input voltages are applied to the first ferromagnetic layer  of each transistor, the relative directions of  magnetization of the ferromagnetic layers and the magnitude  of the external voltage determines the output voltage of  the gate. By altering these parameters, the logic gate is  capable of behaving as AND, OR, NAND, or NOR gates.},
      url = {http://knowledge.uchicago.edu/record/9401},
}