@article{TEXTUAL, recid = {7330}, author = {Sui, Xiaoyu and Rangnekar, Sonal V. and Lee, Jaesung and Liu, Stephanie E. and Downing, Julia R. and Chaney, Lindsay E. and Yan, Xiaodong and Jang, Hyun-June and Pu, Haihui and Shi, Xiaoao and Zhou, Shiyu and Hersam, Mark C. and Chen, Junhong}, title = {Fully Inkjet-Printed, 2D Materials-Based Field-Effect Transistor for Water Sensing}, journal = {Advanced Materials Technologies}, address = {2023-08-15}, number = {TEXTUAL}, abstract = {Despite significant progress in solution-processing of 2D materials, it remains challenging to reliably print high-performance semiconducting channels that can be efficiently modulated in a field-effect transistor (FET). Herein, electrochemically exfoliated MoS<sub>2</sub> nanosheets are inkjet-printed into ultrathin semiconducting channels, resulting in high on/off current ratios up to 10<sup>3</sup>. The reported printing strategy is reliable and general for thin film channel fabrication even in the presence of the ubiquitous coffee-ring effect. Statistical modeling analysis on the printed pattern profiles suggests that a spaced parallel printing approach can overcome the coffee-ring effect during inkjet printing, resulting in uniform 2D flake percolation networks. The uniformity of the printed features allows the MoS<sub>2</sub> channel to be hundreds of micrometers long, which easily accommodates the typical inkjet printing resolution of tens of micrometers, thereby enabling fully printed FETs. As a proof of concept, FET water sensors are demonstrated using printed MoS<sub>2</sub> as the FET channel, and printed graphene as the electrodes and the sensing area. After functionalization of the sensing area, the printed water sensor shows a selective response to Pb<sup>2+</sup> in water down to 2 ppb. This work paves the way for additive nanomanufacturing of FET-based sensors and related devices using 2D nanomaterials.}, url = {http://knowledge.uchicago.edu/record/7330}, }