@article{Photodiodes:2240,
      recid = {2240},
      author = {Ackerman, Matthew Michael},
      title = {From Basic Concepts to Emerging Devices: Mercury Telluride  Colloidal Quantum Dot Infrared Photodiodes for 1 - 5  Microns Detection},
      publisher = {University of Chicago},
      school = {Ph.D.},
      address = {2020-06},
      pages = {163},
      abstract = {HgTe colloidal quantum dots (CQDs) are an emerging  technology important for the development of low-cost,  next-generation infrared technologies. However,  photodetectors based on HgTe CQDs must also be capable of  delivering performances equivalent to or better than the  epitaxial technologies to compete commercially. Here,  concepts and methods are described for designing emerging  HgTe CQD photodiodes with detection in the shortwave and  mid-wave infrared spectral regions and figures-of-merit  rapidly approaching the commercial epitaxial technologies.  The concepts investigated for the design of HgTe CQD  photodiodes included heterojunction diodes with  charge-selective transport layers and homojunction diodes  with thin films of doped HgTe CQDs. The former likely  suffer from unfavorable heterojunction band alignment that  is detrimental to device operation and challenging to  control in narrow-gap CQDs. Doping thin films of HgTe CQDs,  however, is successful, following the introduction of a  solid-state cation exchange process. Heterojunctions of  HgTe CQDs and doped semiconductor nanoparticles were also  essential to the concept and design of inverted-polarity  HgTe CQD photodiodes. Finally, the designs developed within  this work culminate in the demonstration of a SWIR/MWIR  dual-band infrared photodetector. Further developments of  the HgTe CQD photodiodes will follow from addressing design  and material challenges for enhancing the charge collection  efficiency, absorption, and operating temperature of these  photodiodes. Today, the shortwave infrared HgTe CQD  photodiodes demonstrate the most promise, and mid-wave HgTe  CQD detectors with high temperature operation are under  development. The designs here may also extend to the HgTe  CQDs with absorption in the long-wave infrared and position  HgTe CQDs as an emerging technology for the future of  infrared detectors.},
      url = {http://knowledge.uchicago.edu/record/2240},
      doi = {https://doi.org/10.6082/uchicago.2240},
}