@article{TEXTUAL,
      recid = {12665},
      author = {Spellberg, Joseph L. and Kodaimati, Lina and Joshi,  Prakriti P. and Mirzajani, Nasim and Liang, Liangbo and  King, Sarah B.},
      title = {Electronic structure orientation as a map of in-plane  antiferroelectricity in  β′-In<sub>2</sub>Se<sub>3</sub>},
      journal = {Science Advances},
      address = {2024-06-14},
      number = {TEXTUAL},
      abstract = {Antiferroelectric (AFE) materials are excellent candidates  for sensors, capacitors, and data storage due to their  electrical switchability and high-energy storage capacity.  However, imaging the nanoscale landscape of AFE domains is  notoriously inaccessible, which has hindered development  and intentional tuning of AFE materials. Here, we  demonstrate that polarization-dependent photoemission  electron microscopy can resolve the arrangement and  orientation of in-plane AFE domains on the nanoscale,  despite the absence of a net lattice polarization. Through  direct determination of electronic transition orientations  and analysis of domain boundary constraints, we establish  that antiferroelectricity in  β′-In<sub>2</sub>Se<sub>3</sub> is a robust property from  the scale of tens of nanometers to tens of micrometers.  Ultimately, the method for imaging AFE domain organization  presented here opens the door to investigations of the  influence of domain formation and orientation on charge  transport and dynamics.},
      url = {http://knowledge.uchicago.edu/record/12665},
}